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Navitas’ GaN and SiC technologies to be developed to support NVIDIA’s 800 V HVDC data center power infrastructure for1 MW IT racks and beyond.
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Navitas Semiconductor was formed in 2014 to enable a high-speed revolution in power electronics. We are making this revolution possible with the invention of the industry’s first Gallium Nitride (GaN) power ICs which enable up to a 100x increase in switching speeds while increasing energy savings by 3x or more.
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